Passive electronics components comprising coated nanoparticles and methods for producing and using the same

ABSTRACT

The present invention provides various passive electronic components comprising a layer of coated nanoparticles, and methods for producing and using the same. Some of the passive electronic components of the invention include, but are not limited to conductors, resistors, capacitors, piezoelectronic devices, inductors and transformers.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is the National Phase of International Patent Application No. PCT/US2015/023550, filed Mar. 31, 2015, published on Oct. 8, 2015 as WO 2015/153584A1, which claims priority to US Provisional Patent Application No. 61/973,352, filed Apr. 1, 2014. The contents of these applications are herein incorporated by reference in their entirety.

FEDERAL FUNDING STATEMENT

This invention was made with government support under Contract No. DE-SC0010239 awarded by the Department of Energy. The Government has certain rights in this invention.

FIELD OF THE INVENTION

The present invention relates to various passive electronic components comprising a layer of coated nanoparticles, and methods for producing and using the same.

BACKGROUND OF THE INVENTION

The incorporation of particles from millimeter-scale down to nanometers in size is ubiquitous in end-use products produced in industrial-scale quantities. A significant percentage of the particles used across all industries require that the surfaces be coated with a shell, layer, film, or other coating, ranging from sub-nanometer to hundreds of micrometers in thickness. For a variety of reasons, each sector or industry has determined that the incorporation of coated particles into the end-use product provides enough value, e.g., in the form of enhanced performance of the product, that the cost associated with each coating process is justified. Energy storage is one application where nanoscale coatings can significantly improve the uniformity and compatibility of surfaces, allowing for preferential transfer of beneficial ions or electrons across interfaces, while reducing the propensity for detrimental or corrosion promoting species from degrading or otherwise altering these interfaces.

The performance of passive electronic components such as capacitor technologies, including single-layer or multilayered ceramic capacitors (MLCC), electrolytic capacitors, polymer film capacitors, or emerging ultracapacitor and/or supercapacitor systems, relies on the quality of control across interfaces, which in turn defines the specification for capacitance, dielectric strength, breakdown voltage, dielectric loss, etc. Mechanisms to tailor and optimize all surfaces of all materials contained within the system leads to better control, definition, functionality or other specification of performance of any feature of each system.

Ceramic capacitors (bulk ceramic and MLCCs) have existed for quite some time, and the state of the art has progressively advanced to higher energy density, power density, lifetime/durability, and similar advances, all while occupying a decreasing footprint that trends with smaller sizes of integrated circuit technologies. Barium titanate (BaTiO₃) is a commonly used dielectric material. Extensive work on this material has demonstrated that tailored bulk content (e.g., dopants, protonation, etc.) or utilization of surface coatings (e.g., Al₂O₃, SiO₂, etc.) can be used to achieve higher breakdown voltages than untreated materials. Constantino et al. (U.S. Patent Application Publication No. 2001/0048969) discusses Al₂O₃-coated or SiO₂-coated sub-micron BaTiO₃ particles that are exemplary of these additional performance features. Many other tactics have been used to modify dielectric materials to achieve improved device properties.

Methods of producing compositionally-tailored ceramic/dielectric layers themselves using additive, layer-by-layer controlled techniques, even those as precise as Atomic Layer Epitaxy or Atomic Layer Deposition as described by Suntola et al. (U.S. Pat. No. 4,058,430), have been deployed to achieve similar effects (see, for example, Ahn, et al., U.S. Patent Application Publication No. 2011/0275163). In addition, techniques that cast or otherwise form a bulk layer consisting of a plurality of compositionally-tailored coated dielectric particles have also been described. See, for example, Constantino et al. in U.S. Patent Application Publication No. 2001/0048969. Coating processes for particles as precise as Atomic Layer Deposition is described by Lakomaa, et al. in the seminal demonstration of ALD coated particles: “Atomic layer growth of TiO₂ on silica”, Applied Surface Science 60/61 (1992) 742-748.

Several years after the seminal publication of conformal metal oxide coatings on microfine powders (produced using sequential self-limiting gas phase reactions that occurred homogeneously on the surfaces of particles in a fixed bed of particles enclosed in a single batch reactor), additional patents have been issued pertaining to ALD and non-ALD techniques for producing high quality coatings on particles, including nanoparticles. As examples included herein by reference, Krause et al. (EP 0865819) discuss methods of encapsulating particles using fluidized beds; Cansell et al. (U.S. Pat. No. 6,592,938) discuss methods of coating particles using organometallic precursors that are individually known to undergo self-limiting reactions under traditional ALD conditions. Cansell further discusses (see U.S. Pat. No. 7,521,086) as to how the latter coating technique could similarly be utilized for the production of a metal oxide encapsulated BaTiO₃.

As described by King et al. (US 2011/0236575), vapor deposition processes are usually operated batch-wise in reaction vessels such as fluidized bed reactors, rotary reactors and V-blenders, amongst others. Batch processes have significant inefficiencies when operated at large scale. One of the disadvantages of batch processes is that the reactor throughput is a function of the total particle mass or volume loaded into a certain sized vessel for a given process, the total process time (up-time), and the total time between processes (down-time) to load, unload, clean, prepare, etc. In addition, batch processes incur large down-times because at the end of each batch the finished product must be removed from the reaction equipment and fresh starting materials must be charged to the equipment before the subsequent batch can be produced. Equipment failures and maintenance add to this downtime in batch processes.

Moreover, relatively speaking, batch process equipment tends to be very large and expensive. The need to operate these processes under vacuum adds greatly to equipment costs, especially as equipment size increases. Because of this, equipment costs for batch processes tend to increase faster than operating capacity.

Another problem that occurs as the process equipment becomes larger is that it becomes more difficult to maintain uniform reaction conditions throughout the vessel. For example, temperatures can vary considerably within a large reaction vessel. It is also difficult to adequately fluidize a large mass of particles, specifically nanoparticles. Issues such as these can lead to inconsistencies and defects in the coated product.

In vapor deposition processes such as ALD and Molecular Layer Deposition (MLD), the particles are contacted with two or more different reactants in a sequential manner. This represents yet another problem for a batch operation. For a traditional batch process, all cycles are performed sequentially in a single reaction vessel. The batch particle ALD process incurs additional down-time due to more frequent periodic cleaning requirements, and the reaction vessels cannot be used for multiple film types when cross-contamination could be problematic. In addition, the two sequential self-limiting reactions may occur at different temperatures, requiring heating or cooling of the reactor between cycle steps in order to accommodate each step.

The throughput for a batch process can be increased either by building larger reaction vessels and/or operating identical reaction vessels in parallel. The capital cost to counteract this down-time from a throughput perspective is to build a larger reaction vessel. With larger vessels, localized process conditions, including internal bed heating, pressure gradients, mechanical agitation to break up nanoparticle aggregates, and diffusion limitations amongst others, become more difficult to control.

Furthermore, there is a practical maximum reaction vessel size when performing ALD processes on fine and ultra-fine particles, which limits the throughput for a single batch reactor operating continually. In general, the time duration for the process of producing a given amount of coated materials equals the up-time plus down-time. There is also a practical maximum allowable in capital expense to fabricate an ALD-coated particle production facility, which effectively limits the number of batch reactors that can operate identical processes in parallel. With these and other constraints, there are practical throughput limitations that prohibit the integration of some particle ALD processes at the industrial scale.

King et al. (U.S. Patent Application Publication No. 2011/0236575) discusses a high-rate “Spatial ALD” manufacturing process and apparatus for coating particles in semi-continuous fashion using an array of isolated vessels with counter-current gas-solids transport. Van Ommen et al. (U.S. Patent Application Publication No. 2012/0009343) discusses another high-rate “Spatial ALD” process and apparatus to coat particles in a fully continuous co-current gas-solids transport scheme. Each of these methods has its own ascribed operating cost. These methods are suitable for the manufacture of particular coated particles. In addition, each of these methods is believed to be superior and economically more viable to traditional batch (or “temporal”) ALD coating methods. Fotou et al. (Sequential Gas-Phase Formation of Al₂O₃ and SiO₂ Layers on Aerosol-Made TiO₂ Particles” Advanced Materials (1997), 9, No. 5, 420-423) discuss methods of producing nanocoatings on submicron particles by exposing reactive precursors to the surfaces of particles using continuous-flow Chemical Vapor Deposition techniques. However, the consistency, uniformity and thickness do not lend themselves easily to less than 5 nm coatings on submicron-sized particles.

It is expected that a thin film coating (e.g., 5 nm or less) on nanoparticles that are used in passive electronic components will provide a significant protection from degradation and/or oxidation of nanoparticles while maintaining substantially all of its electronic function.

Accordingly, there is a need for thin film coated nanoparticles and methods for producing and using the same in passive electronic components.

SUMMARY OF THE INVENTION

Some aspects of the invention provide a passive electronics component comprising nanoparticles that are coated with a thin film of material. The thin film coating can be an oxidation-resistant material or a reliability-improving material. As used herein, the term “reliability-improving materials” refers to materials that can improve the performance and/or the life span or mean time to failure of the passive electronics component compared to the same passive electronics component in the absence of the thin film coating. In one particular instance, the reliability-improving materials increase the performance of the passive electronics component by at least 10%, typically by at least 25%, and often by at least 100%. compared to the same passive electronics component in the absence of the thin film coating. In another instance, the reliability-improving materials increase the mean time to failure of the passive electronics component by at least 20%, typically by at least 50%, and often by at least 200% relative to the same passive electronics component in the absence of the thin film coating.

As used herein, the terms “same passive electronics component in the absence of the thin film coating” and “similar passive electronics components in the absence of the thin film coating” are used interchangeably herein and refer to the electronics component that is produced using the same material and same process except for the absence of the thin film coating.

In one particular aspect of the invention, the passive electronics component comprises an electrode layer of electric conducting nanoparticles. The nanoparticles of the invention are coated with a thin film of oxidation-resistant material. The thin film of oxidation-resistant material prevents oxidation of the nanoparticles while maintaining the function of the electrode layer substantially the same as that of a similar electrode layer of electric conducting nanoparticles in the absence of said thin film of oxidation-resistant material. As used herein, the term “similar electrode layer” refers to an electrode layer that is produced in identical conditions except for the absence of the thin film of oxidation-resistant material. The term “nanoparticles” refers to particles having average or median particle size of 1000 nm or less, typically 500 nm or less, often 400 nm or less, and most often 250 nm or less. Alternative, the term “nanoparticles” refers to particles in which 80% or more, typically 90% or more and often 95% or more of the particles have the particle size of 1000 nm or less, typically 800 nm or less, and often 600 nm or less. As used herein, the term “thin film” refers to a film or a coating of a material having mean or median thickness of about 20 nm or less, typically 10 nm or less, often 5 nm or less, and most often 3 nm or less. Alternatively, the term “thin film” refers to a film of from about 2 to about 6 nm in thickness. Still alternatively, the term “thin film” refers to a mono-atomic or molecular layer of coating material. Often, the term “thin film” refers to the thickness of a coating material achieved using the process disclosed in a commonly assigned U.S. patent application Ser. No. 13/069,452, entitled “Semi-Continuous Vapor Deposition Process For The Manufacture of Coated Particles.” In general, the thin film is formed by an atomic layer deposition process, which can be carried out in a batch mode, semi-continuous mode, continuous mode, or a combination thereof It should be appreciated that the thin film can also be formed using any of the methods known to one skilled in the art.

In some embodiments, the thin film of oxidation-resistant material provides no significant additional resistivity to said nanoparticles. The term “no significant additional resistivity” refers to a resistivity of a coated nanoparticle, which first has its native oxide removed prior to coating, whose resistivity differs from the resistivity of uncoated nanoparticle of same composition, without the native oxide being removed, by no more than about 20%, typically no more than about 10%, and often no more than about 5%.

Yet in other embodiments, the thin film of oxidation-resistant material does not significantly affect the sintering of said nanoparticles. As used herein, the term “sintering” refers to atomistic diffusion between nanoparticle and the thin film or atomistic diffusion between nanoparticles. Also as used herein, the term “does not significantly affect the sintering of said nanoparticles” means the amount of sintering or the sintering temperature in the presence of the thin film coating is substantially similar to the amount of sintering or the sintering temperature of the same nanoparticles in the absence of a thin film coating. Generally, the amount of nanoparticle sintering in the presence of the thin film coating is no more than 15%, typically no more than 10%, and often no more than 5% different compared to the amount of nanoparticle sintering in the absence of the thin film coating. Alternatively, the sintering temperature in the presence of the thin film coating is within 50° C., typically within 30° C., and often within 20° C. of the nanoparticle sintering temperature in the absence of the thin film coating.

Still in other embodiments, the thin film of oxidation-resistant material comprises a thin film of wide bandgap material. As used herein, the term “wide bandgap material” refers to materials with electronic band gaps significantly larger than 1.5 electron volt (eV), typically larger than 3.0 eV, and often larger than 5.0 eV. In some instances, the wide bandgap material comprises a material selected from the group consisting of aluminum oxide, hafnium oxide, zirconium oxide, tantalum oxide, niobium oxide, lithium oxide, silicon oxide, calcium oxide, magnesium oxide, boron oxide, aluminum phosphate, titanium phosphate, lithium phosphate, calcium phosphate, aluminum nitride, gallium nitride, boron nitride, boron carbide, and a combination thereof Still in other instances, the thickness of the thin film coating of wide bandgap material is 8 nm or less, typically 5.5 nm or less, and often 3.5 nm or less.

In other embodiments, the thin film of oxidation-resistant material comprises a thin film of semiconducting or conducting material. Exemplary semiconducting materials that are suitable for the present invention include, but are not limited to, zinc oxide, titanium oxide, cerium oxide, vanadium oxide, barium oxide, bismuth oxide, ruthenium oxide, indium oxide, tin oxide, lanthanum oxide, titanium nitride, tantalum nitride, silicon carbide, and ternary or quaternary combinations that include these and other analogous materials. Exemplary conducting materials that are useful in the present invention include, but are not limited to, metals (such as platinum, silver, gold, titanium, copper, zinc, chromium, nickel, iron, molybdenum, tungsten, ruthenium, palladium, indium, and tin), alloys or intermetallics (such as PtNi, FeCrAlY, AgPd, nichrome, and other conductive steels) and other electric conducting materials such as those containing carbons (such as graphite, graphene, diamond and diamond like carbon, and PEDOT and other conductive polymers).

In one particular embodiment, the resistivity of said thin film of oxidation-resistant material is 50,000 μΩ-cm or less, typically 5,000 μΩ-cm or less, and often 500 μΩ-cm or less.

Yet in other embodiments, the thin film of oxidation-resistant material comprises a dopant material. Exemplary dopant materials that are useful in the invention include, but are not limited to, +5 valence materials into +4 valence materials (such as tantalum oxide doped into titanium oxide), +3 valence materials into +2 valence materials (such as aluminum oxide doped into zinc oxide), and commonly known doped transparent conductive oxides (such as fluorine-doped tin oxide). Typically, the dopant material increases the conductivity of the thin film of oxidation-resistant material by at least 20%, often by at least 50% and most often by at least 100%.

Still in other embodiments, a thermal oxidation onset temperature of the nanoparticles with the thin film coating is at least 10° C., typically at least 25° C., and often at least 100° C. higher than the same nanoparticles in the absence of said thin film of oxidation-resistant material.

Yet still in other embodiments, the average particle size of said nanoparticles is 1,000 nm or less, typically 800 nm or less, and often 500 nm or less.

Depending on a particular application, the passive electronics component can comprise a plurality of said electrode layers.

Another aspect of the invention provides a passive electronics component comprising a dielectric or piezoelectric layer of corresponding nanoparticles that are coated with a thin film of a reliability-improving material. In this aspect of the invention, the nanoparticles are dielectric or piezoelectric nanoparticles. Exemplary dielectric or piezoelectric materials that are useful in the present invention include nanoparticles composed of materials including, but are not limited to, barium titanate, strontium titanate, barium strontium titanate, barium niobate, strontium niobate, barium strontium niobate, sodium niobate, potassium niobate, sodium potassium niobate, titania, zirconia, lead zirconate, lead zirconate titanate, calcium copper titanate, bismuth scandium oxide, bismuth zinc oxide, bismuth titanate, bismuth zinc titanate, zinc oxide, and zinc titanate.

In some embodiments, the reliability-improving material comprises SiO₂, ZrO₂, B₂O₃, Bi₂O₃, Li₂O, or a mixture thereof.

Still in other embodiment, the thin film coating reduces the densification onset temperature of said nanoparticles. As used herein, the term “densification” means atomistic diffusion between or within the thin films, and/or interactions with additional densification aids (such as glass or glass-forming powders) present in the system, as relevant. Also as used herein, the “densification onset temperature” means the temperature at which nanoparticles coated with thin films begin to densify and reduce the void space present between a plurality of said nanoparticles. The densification temperature of nanoparticles in the absence of a thin film coating is the same as the sintering temperature of the nanoparticles. Alternatively, the thin film coating serves as a solid precursor to liquid phase sintering of the nanoparticles, at temperatures substantially lower than the traditional sintering temperature of said nanoparticles. In general, the densification temperature of the nanoparticles is at least 25° C. lower, typically by at least 50° C. lower, and often by at least 100° C. lower than the sintering temperature of the same nanoparticles in the absence of the thin film coating.

In one particular embodiment, said nanoparticles comprise barium titanate, and said reliability-improving material comprises an oxide of a metal comprising bismuth, zinc, titanium, scandium, or a mixture thereof In some instances within this embodiment, said reliability-improving material comprises zinc titanium oxide, bismuth zinc titanium oxide or bismuth scandium oxide.

In another embodiment, said nanoparticles comprise an alkali niobate perovskite, and said reliability-improving material comprises an oxide of a metal selected from the group consisting of tantalum, sodium, potassium, or a mixture thereof In some instances within this embodiment, said reliability-improving material comprises an alkali tantalate.

Yet in another particular embodiment, said reliability-improving material increases the mean time to failure by at least 10% relative to the same passive electronics component in the absence of said thin film of reliability-improving material.

Still in another particular embodiment, said thin film of reliability-improving material reduces the average grain size of said nanoparticles by at least 20 nm, typically by at least 50 nm, and often by at least 100 nm when fired into fully-dense parts.

As stated above, the thin film coating in some embodiments is produced at least in part using an atomic layer deposition or molecular layer deposition process.

The scope of the invention also includes a passive electronics component comprising a plurality of said dielectric or piezoelectric layers.

Still another aspect of the invention provides a passive electronics component comprising a dielectric and/or piezoelectric layer described herein in combination with an electrode layer comprising electric conducting nanoparticles described herein. That is said nanoparticles of said dielectric and/or piezoelectric layer are coated with a thin film of a reliability-improving material and/or said electric conducting nanoparticles are coated with a thin film of oxidation-resistant material.

Other aspects of the invention include an electronic device comprising a passive electronics component disclosed herein such as one or more electrode layer(s), dielectric layer(s), and/or piezoelectric layer(s).

One specific aspect of the invention provides a capacitor comprising a thin film coated nanoparticles, wherein said thin film coated nanoparticles comprise an electric conducting nanoparticles that are coated with a thin film of an oxidation-resistant material, and wherein said thin film prevents oxidation and sintering of but substantially maintains the electric conductivity property of said nanoparticles. In some embodiments, said oxidation-resistant material comprises a wide bandgap material. In some embodiments, said capacitor is a multilayered ceramic capacitor or MLCC.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1—A transmission electron microscope (TEM) image of an exemplary set of coated electrode-grade nickel nanoparticles with limited (˜5-10%) agglomeration. Particles ranged from ˜50 nm to ˜600 nm in this sample.

FIG. 2—A magnified TEM image of the lower left portion of FIG. 1, showing coated particles that had agglomerated during the ALD coating process using a batch fluidized bed reactor.

FIG. 3—A magnified TEM image from the upper right portion of FIG. 1, showing coated particles that have necked together during the ALD coating process using a batch fluidized bed reactor.

FIG. 4—A high resolution TEM image of an exemplary ˜7 nm coating on an electrode-grade nickel nanoparticle.

FIG. 5—Thermal gravimetric analysis (TGA) thermal stability testing of uncoated and coated electrode-grade nickel nanoparticles in air. The weight was measured continuously while the temperature was increased at a 10° C./min rate. The uncoated material began to increase in weight, which is indicative of the onset of nickel oxidation, at 300° C.; the coated material began to increase in weight at 700° C.

FIG. 6—Thermal stability testing of uncoated and coated electrode-grade nickel nanoparticles at 300° C. for 12 hours, designed to mimic a binder burn-out process in air. The uncoated nickel nanopowder originally had 0.1% NiO by weight, and oxidized to 16.6% NiO after the 12 hour dwell period. A sub-critical ALD coating thickness was used for the test, and reduced the amount of oxidation to 10.5%. The optimal coating thickness identified, which was twice as thick as the sub-critical ALD coating thickness, effectively prevented all oxidation while allowing a binder burn-out process to occur at 300° C. in air rather than a conventional temperature of 270° C. in air.

FIG. 7—Dielectric constant and loss (tan delta) measurements for alkali niobate—nickel nanopowder co-fired capacitors produced with uncoated and coated nickel nanopowder over a range of co-firing oxygen partial pressures. Nearly independent of oxygen partial pressures, the thin film coated nickel nanoparticles demonstrated ability for repeatable dielectric constant with ultra-low dielectric loss, without modifying the dielectric powders themselves. This invention can ultimately allow for fast co-firing steps to be carried out in air, and allow thin film coated nickel or copper nanoparticles to supplant platinum and silver-palladium used in air firing steps today. This test also showed that even in samples with limited agglomeration due to the coating process, the performance of mildly agglomerated thin film coated nickel nanoparticles remains suitable for electrode applications.

FIG. 8—Dielectric constant and loss (tan delta) measurements for alkali niobate—nickel nanopowder co-fired capacitors produced with uncoated and coated nickel nanopowder over a range of co-firing oxygen partial pressures; raw data from FIG. 7.

FIG. 9—Comparison of XRD data for Ni and NiO for coated and uncoated Ni Powders Fired in Air in an Elevator Kiln showing negligible NiO in the ALD coated case. Images of Nickel ink samples after firing @800° C./3 min (inset) are shown, with the outline color matching the colors on the XRD spectra legend. This data suggests that ALD coatings are much more robust to thermal shock than originally anticipated. Those skilled in the art have attributed the oxidation of nanocoated metal powders to film cracking allowing oxygen ingress, when viewing TGA data shown in FIG. 5 at a temperature ramp rate of 10° C./min; however an unexpectedly greater thermal stability has been demonstrated for this ˜250° C./min thermal shock. The cooling time was substantial enough that the material remained above 300° C. for long enough that additional oxidation would have been rampant for grossly cracked films, and this was not the case.

DETAILED DESCRIPTION OF THE INVENTION

Electronic devices have become ubiquitous in today's society. As modern electronic devices have become smaller, their components have also become smaller. In fact, some components of modern electronic devices are micro-scales. As these electronic components become smaller, they are more susceptible to degradation or oxidation, which significantly reduces the life of modern electronic devices. Electronic devices contain both active and passive electronic components. The term “passive electronic components” refers to components of electronic devices that can't introduce net energy into the circuit. Exemplary passive electronic components include, but are not limited to, two-terminal components such as resistors, capacitors, inductors, and transformers. In general, passive electronic components can't rely on a source of power, except for what is typically available from the circuit they are connected to. Thus, passive electronic components can't amplify (e.g., increase the power of a signal), but they may increase a voltage or current (e.g., as is done by a transformer or resonant circuit).

While present invention relates to a thin film coated nanoparticles that are used in various passive electronic components, for the sake of brevity and clarity the present invention will now be described in reference to capacitors. However, it should be appreciated that the scope of the invention includes thin film coated nanoparticles that are used in other passive electronic components such as resistors, inductors, and transformers. Moreover, methods disclosed herein can be used to produce such other passive electronic components.

Today, MLCCs are most efficiently manufactured through the casting of alternating layers of inks/pastes consisting of electrode powders and dielectric powders, stacked in direct contact with one another, and after which binder burn-out and co-firing (e.g., sintering) steps are executed on assembled systems. Exemplary processing techniques are described by Imanaka (“Multilayered Low Temperature Co-fired Ceramics Technology”, Springer, 2005) and by Nakano et al. (U.S. Pat. No. 7,595,974), which are incorporated herein by reference in their entirety.

There is an industry need to supplant the use of silver, platinum, palladium, and other costly precious metals used in electrode inks/pastes with base metals having one or more protective oxidation barrier coatings. Adopting suitable methods of supplanting expensive materials for low-cost base metals that achieve the same level of application functionality will significantly reduce the cost of MLCCs and other advanced power electronics devices. Hakim et al. (“Synthesis of oxidation-resistant metal nanoparticles via atomic layer deposition” Nanotechnology 29 (2007) 345603-345609) discusses how ALD can be used to encapsulate base metal particles, and extend their oxidation onset temperature by hundreds of degrees Celsius. Furthermore, ultrafine base metal powders can be produced via metal oxalate decomposition as described by Dunmead et al. (U.S. Pat. No. 6,689,191). Those skilled in the art have claimed that the oxidation onset temperature is driven by film cracking, however the present thin film coated nanoparticles can be thermally treated above this oxidation onset temperature during fast-firing steps without substantial oxidation as would be anticipated from films that crack at the oxidation onset temperature as measured using slow heating rates.

It is unexpected, however, that when producing insulator-coated electrode powders using ALD, that these composite particles (e.g., BaTiO₃—Ni MLCCs with co-fired inner electrodes) can function as well as pristine base metal electrode powders used today. Especially in light of U.S. Pat. No. 7,132,697, issued to Weimer et al. (the “Weimer et al. Patent”), discussing that ALD coated metal particles of 10 nm to 500 μm in diameter, with insulating coatings of 0.25 nm-500 nm in thickness, demonstrated non-linear resistivity with respect to film thickness. This patent implicitly appears to teach that metal particles coated with insulating metal oxide coatings deposited using ALD cannot serve as a drop-in replacement to uncoated particles in many other passive component applications such as capacitors and conductors.

In contrast to these teachings, the present inventors have discovered that the incorporation of 2-5 nm Al₂O₃ ALD coated submicron metallic Ni particles (600 nm and smaller) results in no significant additional resistivity even when operating at voltages below the accepted breakdown strength of bulk aluminum oxide. In some embodiments, metallic nickel particles are subjected to native oxide removal pretreatments prior to coating. The resulting ALD-coated metallic nickel particles can be used to either fully or partially supplant uncoated Ni particles (or the corresponding Ag, Pt and other common electrode materials). Similarly, ALD-coated metallic copper particles can be used to either fully or partially supplant uncoated Cu particles (or the corresponding Ag, Pt and other common electrode materials). Accordingly, some aspects of the invention provide a single-layer ceramic capacitor and/or MLCCs that yields no significant additional resistivity due to the coatings relative to the base metal itself As used herein, the term “no significant additional resistivity” refers to a resistivity of an ALD-coated base metal nanoparticle, which first has its native oxide removed prior to coating, whose resistivity differs from the resistivity of uncoated base metal nanoparticle of same composition with its native oxide intact, by no more than about 20%, typically no more than about 10%, and often no more than about 5%. In some embodiments, the thin film of oxidation-resistant material provides no significant additional resistivity to said nanoparticles. Moreover, it has been discovered by the present inventors that a wide variety of nanoparticles that can be used in passive electronic components can be coated with a thin film of protective material. As used herein, the term “nanoparticles” refers to particles having average or median particle size of 1,000 nm or less, typically 500 nm or less, often 400 nm or less, and most often 250 nm or less. Alternative, the term “nanoparticles” refers to particles in which 80% or more, typically 90% or more and often 95% or more of the particles have the particle size of 1,000 nm or less, typically 800 nm or less, and often 600 nm or less. As used herein, the term “thin film” refers to a film or a coating of a material having mean or median thickness of about 20 nm or less, typically 10 nm or less, often 5 nm or less, and most often 3 nm or less. The term “base material” refers to the core material or nanoparticles of the invention. The term “coating” or “shell” is sometimes used to describe a thin film of material that covers the nanoparticles or the core material. It should be appreciated that the nanoparticle material and the thin film of coating are typically composed of different materials.

Surprisingly and unexpectedly, the present inventors have discovered that applying a conductive ALD coating (or a semiconducting coating with an electronic band gap that is less than the operating voltage) to the surface of a 3,000 nm base metal electrode powder (copper) that had native oxide remaining intact, resulted in non-conductive composite particles. This observed result is contrary to what is disclosed or implied in the Weimer et al. Patent, which describes “a non-conductive coating that is deposited on core conductive particles using atomic layer deposition methods.” For example, one of the examples in the Weimer et al. Patent describes 5,000 nm diameter iron particles coated with 5.5 and 22 nm Al₂O₃ films. The Weimer et al. Patent also identified the presence of an Fe₂O₃ native oxide interlayer (a commonly known insulator) at the interface between the innermost surface of the coating and the outermost surface of the core particle. Elsewhere, Weimer et al. have published that 7.5 nm-22 nm coatings on micron-sized Nickel powder demonstrated a similar nonlinear resistivity to the coated iron described in the Weimer et al. Patent. See, “Ultrafast metal-insulator varistors based on tunable Al₂O₃ tunnel junctions” Applied Physics Letters 92, (2008) 164101. However, no mention was made in this work as to whether the native oxide remained intact at the surface or if pretreatment steps were utilized to remove the native oxide. The Weimer et al. Patent implies that the insulating Al₂O₃ coating is the exclusive feature of their invention that provides non-linear resistivity with film thickness, while neglecting the contribution of the native oxide, which is also commonly known to be an insulator. There is an implicit presumption that the uncoated core conductive particles used for the study were tested in the same manner as the coated particles, however no data is presented for the 5,000 nm diameter iron particles with a native Fe₂O₃ layer, nor is any particle size smaller than 5,000 nm described. More importantly, it is well known to those skilled in the art of producing electronic components from powdered materials or inks containing powdered materials that there is a strong non-linear resistivity with respect to pressure. The Weimer et al. Patent does not discuss pressure; the publication however offers that the materials were placed in a centrifuge, and it is implicitly understood to be subject to a very high compaction pressure. This matrix of particles produced and tested is entirely different from how conventional passive electronics components such as conductors and capacitors are produced, specifically using an electrode layer produced through the printing of a particle-containing ink. Most surprisingly to the inventors was the discovery that conductive particles of 1,000 nm and smaller, first having the native oxide removed, and second having a coating process in which a thin (typically 2-6 nm) insulating ALD film was applied, was particularly useful as a conductive electrode powder for passive electronics components consisting of layers of electrode powders produced using conventional ink printing technologies, and moreover that these materials could be drop-in replacements for conductive electrode powders that did not have a thin film coating.

One difficulty faced when dealing with fine metal powders, especially submicron powders, is their propensity to form native oxide films in the presence of air and moisture, even at standard temperatures and pressures. For example, in the examples discussed above by Weimer et al., ALD-coated 5 micron metallic iron particles showed the presence of iron oxide at the interface between the particle and coating. It is well known to one skilled in the art that steps to remove this native oxide prior to coating can significantly improve the quality of the coated metal powders and their suitability for use in particular applications. Processes for removing native oxides are well known to one skilled in the art. For example, gas-solid contacting steps, in which metal particles are exposed to reducing gases at elevated temperatures, are oftentimes suitable in reducing the oxidation state of core materials, promoting oxygen vacancies, and/or promoting other beneficial phenomena. Similar reducing gas (e.g., “forming gas”) exposures (sometimes referred to as protonation pretreatment steps) have been successful in improving properties of dielectric materials such as BaTiO₃. As is the case with pristine (i.e., substantially pure or a purity of at least 95%, typically at least 98% often at least 99%, and more of the at least 99.5%) metals that have higher surface energy than their native oxide coated counterparts, there is a strong likelihood that ultrafine metallic particles will permanently sinter or otherwise agglomerate if adjacent particles with reduced surfaces are allowed to come in contact with one another for extended periods of time during reduction steps in elevated temperature. Coatings have proven to be useful in preventing inter-particle sintering. In general, coating can prevent sintering entirely compared to uncoated particles that undergo sintering under similar conditions. In some instances, coating allowed a significant reduction in sintering as evidenced by requiring prolonged time and/or sintering temperature. In some cases, coating a particle increased sintering temperature as much as 200° C. to 300° C. compared to uncoated particles under similar conditions.

Some aspects of the invention, therefore, provide a metallic particle comprising a continuous nanoscale coated oxidation-resistant and electric conducting film. In some embodiments, the coating is an ultrathin coating consisting of a single to a plurality of atomic layer coatings. In one particular embodiment, the coating is an aluminum oxide coating. The particle size of the metallic particle, prior to coating, is typically from about 50 nm to about 3,000 nm, often from about 80 nm to about 1,000 nm, and most often from about 100 nm to about 600 nm. Typically, the “base material” comprises nanoparticles.

As stated above, compositions of the invention can be used in a wide variety of passive electronic components including in conductors, transducers, actuators, piezoelectrics, transistors, thyristors, and capacitors. Methods and compositions of the invention can also be used in conductor-coated metals as core-shell electrode powders. Providing a coating of thin film as described herein provides a wide variety of beneficial effects including, but not limited to, limiting agglomeration during coating process and still achieve results, i.e., maintain substantially the similar electric conductivity and/or resistivity. Molecular layer deposition (MLD) process coated particles generally can be calcined to allow the coating shells to become porous and allow for forming-gas reduction of metals while preventing metals from sintering, i.e., enabling native oxide removal without sintering. An exemplary MLD process includes the in situ production of these materials by coating MLD films on metal oxalate particles, then decomposing the metal oxalate and making MLD porous in single process. Methods of the invention can be used to also produce core-shell magnetic materials, i.e., magnetic nanoparticles that are coated with a thin film of non-magnetic “shell”.

Compositions of the invention can also be used to produce improved electrode layers by printing, spraying or other means to achieve ultrathin layers for MLCCs, single-layer capacitors, batteries, ultra-capacitors, etc. As used herein, the term “improved” refers to having increased life-time of the passive electronic components due to the coating of thin film on nanoparticles. Typically, the life-time of an electrode layer comprising a thin film coated nanoparticles is at least 10% more, typically at least 25% more, and often at least 50% more, compared to an electrode layer with the similar (i.e., uncoated) nanoparticles.

Some compositions of the invention include ceramic-coated dielectric particles. Typically, the atomic layer deposition (ALD) process is used to produce core-shell dielectrics. As used herein, unless the context requires otherwise the term “core” refers to the nanoparticles and the term “shell” refers to the thin film coating on the nanoparticles. In some cases, the presence of thin film coating improves or prevents ion mobility in dielectric nanoparticles. In other instances, the thin film coating can be used to manipulate or affect the final particle size, e.g., after firing or heating.

A thin film coating present on the nanoparticles of the invention prevents sintering at high temperature, e.g., during forming gas reduction process. In some cases, the thin film coating, e.g., SiO₂ coating, is thin enough to be permeable to reducing gas such as hydrogen while preventing sintering of nanoparticles. In some instances, compositions of the invention include MLD-coated particles where the thin film coatings become porous ceramic oxides to allow gas flow. In such instances, a second coating of thin film can be applied, e.g., after heat treatment. In other instances, the second coating of thin film provides an impermeable dielectric layer.

The thin film of coating can be applied to nanoparticles using a batch process (see the Weimer et al. Patent), a semi-continuous process (see commonly assigned U.S. patent application Ser. No. 13/069,452, entitled “Semi-Continuous Vapor Deposition Process For The Manufacture of Coated Particles”), a continuous process (U.S. Patent Application Publication No. 20120009343), as well as variations thereof including plasma-enhanced processes, or a combination thereof

Additional objects, advantages, and novel features of this invention will become apparent to those skilled in the art upon examination of the following examples thereof, which are not intended to be limiting. In the Examples, procedures that are constructively reduced to practice are described in the present tense, and procedures that have been carried out in the laboratory are set forth in the past tense.

EXAMPLES

Metallic copper particles devoid of native copper oxide coating, with and without ALD encapsulation coatings, have been produced in a set of six trials, using two different copper substrates to compare and contrast coating processes: two trials utilized 1-5 micron copper powders that maintained a nanoscale native oxide of copper in the as-received state (substrate A); and two trials utilized the decomposition of a copper oxalate powder in a fluidized bed reactor (substrate B). For substrates A and B, the following processes were run:

-   -   (1) Forming gas exposure at elevated temperature (450° C.) for         60 minutes;     -   (2) The process of (1) followed by a 3 nm ALD coating of Al₂O₃;         and     -   (3) A first coating of a 5 nm aluminum alkoxide layer via the         Molecular Layer Deposition (MLD), which results in a mesoporous         Al₂O₃ coating during an elevated temperature organic burn-out         step. Subsequently the process of (2) was followed, inclusive of         the process of (1) as described above.         For cases A-1 and B-1, particle size distributions were shifted         to dramatically larger values, a clear indication that         inter-particle sintering was rampant. The d50 particle size         using the B substrate is typically smaller than the d50 particle         size of a bulk micron-scale powder of the same metal. After         being exposed to air for 24 hours, copper oxide was clearly         observed using XRD. For cases A-2 and B-2, a similar shift in         particle size occurred, as that aspect of the processing was         identical, however the Al₂O₃ coatings prevented the oxidation of         the underlying copper powders as copper oxide was not observed         using XRD. For cases A-3 and B-3, the aluminum alkoxide converts         to a porous Al₂O₃ shell during the forming gas treatment step,         which allows for forming gas to directly contact the surface of         the particles, and the reduction step can proceed to completion         while only the outermost Al₂O₃ surfaces are in contact with one         another within the particle bed. Upon completion of the forming         gas reduction step, the Al₂O₃ ALD shell was applied. The 3 nm         Al₂O₃ ALD coating was again sufficient to prevent the oxidation         of copper particles upon exposure to air for 24 hours. The         dramatic difference between A-3 and B-3, relative to the         analogues seeing only processes 1 and 2, was that the particle         size remained largely unchanged, aside from what is naturally         expected when carrying out such intensive, sequential coating         processes on particles in vacuum fluidized bed reactors with         vastly different temperature processing steps.

Barium titanate particles with and without ALD coatings were subject to protonation steps, or high temperature forming gas exposures. Uncoated barium titanate treated for 1 hour at 900° C. in forming gas (4% H₂ in N₂), produced a locally-sintered powder with particle size distribution shifted to significantly larger sizes. Al₂O₃ and SiO₂ ALD coatings were applied to pristine barium titanate particles as well, and in both cases after identical forming gas treatments, the nanoscale coatings were sufficient to prevent sintering-induced aggregation observed extensively with the uncoated materials. The Al₂O₃-coated barium titanate turned a deep blue color, perhaps evidence that aluminum doping and/or barium aluminate formation occurred. However with the glassy SiO₂ coating, the material turned dark gray only, while maintaining a uniform particle size distribution that was changed only due to the fluidized bed coating process itself This set of coating trials elucidated the value of tailoring the sintering prevention coating for specific processes, in that hydrogen gas in the forming gas process could much more readily diffuse through the deposited SiO₂ ALD coatings than the deposited Al₂O₃ ALD coatings, while the effect of sintering prevention was maintained independent of these coating materials. The protonated SiO₂-coated barium titanate can then be overcoated using protective Al₂O₃ layers for a grain boundary barrier effect, additional SiO₂, Li₂O or B₂O₃, layers to serve as fritting material, or other coatings depending on the desired purpose.

ALD-coated submicron-sized nickel powders have been formulated into standard inks for producing MLCC inner electrode tapes, alongside tapes made from inks formulated using uncoated nickel powders. Prior to this formulation, it is advantageous to better understand and define the minimum critical coating thickness required to prevent base metal oxidation during the binder burnout process. This process is typically run at no higher than 270° C. for 12 hours in air; however it is highly desirable to increase the working temperature to 300° C. for 12 hours in air to reduce the residual carbon and impurities that are normally left behind after an incomplete binder burnout process at lower temperatures. The Ni and NiO content was measured on raw powders before and after this thermal treatment step in a standard tube furnace. The control sample prior to the binder burnout process had a NiO content of 0.1 wt % as measured using powder XRD. The heat treated control sample had a resulting NiO content of 16.6%; one heat treated ALD-coated sample that was coated below the critical thickness had a resulting NiO content of 10.5%. Thicker ALD-coated samples at or above the critical thickness had resulting NiO contents of 0.2% or 0.1%.

The alkali niobate/nickel co-fired MLCC system is one of a select number of possible candidates for lead-free high temperature, high voltage, high reliability capacitors for high temperature power electronics (e.g., SiC-based ICs) that require 150° C.-300° C. device operation. Another such candidate is bismuth zinc titanate-barium titanate (BZT-BT) dielectric layers ideally paired with oxidation-resistant copper inner electrodes. MLCCs consisting of layers of coated (at the defined critical thickness) vs. uncoated inner (nickel) electrode tapes and tapes made from formulated pristine alkali niobate powders were each fabricated to test the hypothesis that passivated base metal electrodes could be used as drop-in replacements to pristine nickel powders for MLCC applications. Post binder burnout, it is common to vary the oxygen partial pressure during high temperature co-firing steps and measure the dielectric constant and dielectric loss (tan δ) of the system to optimize the co-firing process for any new materials. For a given cast tape thickness, the optimal results would be a controllable dielectric constant for the layer, and minimal loss.

Processes and procedures to modify or tailor the dielectric materials in the dielectric layer have demonstrated control over these variables, so the anticipated result of utilizing passivated Ni tapes relative to pristine tapes was that the dielectric properties of the system would be unchanged, but perhaps a higher voltage bias would be needed to utilize the capacitor devices if the teachings of nonlinear resistivity by Weimer et al. were accurate in submicron base metals and sub 5 nm coating thicknesses. Two unexpected results were demonstrated by this test. First, the use of passivated inner electrodes did not require altering the electrical test conditions, likely suggesting that particles smaller than 1 micron in diameter and/or films thinner than 5 nm may not have been produced and evaluated by Weimer. Second, the use of ALD-coated inner electrode materials delivered a significant degree of robustness to the entire system with respect to a highly uniform and consistent dielectric constant with respect to co-firing oxygen partial pressure, and an incredibly low dielectric loss. This is the first demonstration of coated inner electrode materials paired with pristine dielectric materials that has delivered some of the same benefits as modifications to the dielectric materials themselves. The implications of this are broad and far-reaching, in that not only can ALD-coated inner electrodes be used to withstand operating conditions of next generation high temperature integrated circuit devices, but that relatively simple and low-cost metal coating steps can supplant the extensive and oftentimes complicated dielectric modification steps described herein. In addition, with better control over the dielectric properties of individual layers, the practical number of layers within ALD-incorporated MLCCs should be significantly larger than without using ALD-coated materials. This has a direct impact on the energy density attainable in MLCC devices.

The alkali niobate/nickel co-fired MLCC system was tested using tin oxide coated Ni to determine whether an insulator-metal composite particle was critical to affecting the dielectric properties of the system, or if a conductive coating could yield the same unexpected results. Other materials have also been coated on Ni, such as SiO₂, B₂O₃, TiO₂, Ta₂O₅, Si₃N₄, TiN and other metal oxides and nitrides commonly known to be applied using ALD techniques.

In order to further optimize the systems toward high temperature lead-free capacitors for demanding applications (e.g., DC Link capacitors), the previously described BZT-BT/Nickel and BZT-BT/Copper co-fired MLCC systems were tested with coated and uncoated electrode powders, and some variants included coatings and/or pretreatments to the dielectric materials themselves. Glassy coatings including SiO₂ and B₂O₃ may also be useful to improving the overall homogeneity of these co-fired systems.

Standard barium titanate/Ni co-fired MLCC systems were also tested with coated and uncoated electrode powders, and some variants included coatings and/or pretreatments to the dielectric materials themselves. Glassy coatings including SiO₂ and B₂O₃ may also be useful to improving the overall homogeneity of these co-fired systems as well.

Plasma-enhanced atomic layer deposition (PE-ALD) coating techniques are commonly used to remove residual contaminants from incomplete surface reactions at lower operating temperatures. A PE-ALD TiN coated Ni electrode tape was produced along with a conventionally produced ALD TiN coated Ni electrode tape, to determine whether a change in residual contaminant (typically Cl from TiCl₄) level results in a higher electrical conductivity in a particle system, and whether this would affect the dielectric constant and loss to as great of a degree as an insulative coating or a less conductive coating. An exemplary demonstration is the production of TiN ALD coatings on particles, in which TiCl₄ and NH₃ can be administered in sequential fashion with HCl being the reaction product. Even at 400° C., there can be residual chlorine in the coatings, which makes the coatings materially different from TiN coatings devoid of contaminants. The TiN process for coating particles is identical to that demonstrated by Lakomaa in 1992 for TiO₂ (see “Atomic layer growth of TiO₂ on silica”, Applied Surface Science 60/61 (1992) 742-748), except NH₃ replaces H₂O in sequential self-limiting gas-solid contacting steps on particle surfaces in the bed of powder. Low temperature ALD processes using TiCl₄ and H₂O can leave 2.0-10.0 wt % chlorine in the films. More recently, Elam et al. (“Surface chemistry and film growth during TiN atomic layer deposition using TDMAT and NH₃” Thin Solid Films 436 (2003) 145-156) disclosed a route to TiN ALD using tetrakis-dimethylamino titanium and ammonia, and even this precursor resulted in 2-5 wt % carbon in the film. The best films possessed a resistivity more than 600 times that of bulk TiN, which is unappealing for most conductive coating applications. TiN via thermal ALD typically has resistivity values>10,000 μΩ-cm, whereas Plasma-Enhanced TiN ALD typically has resistivity values<300 μΩ-cm. PE-ALD was used to deposit TiN onto Ni powders, which are then used as inner electrodes in MLCCs.

The surprising and unexpected discovery of the effect that co-fired ALD-coated inner electrodes have on MLCC devices is especially useful if the materials can be coated economically and at industrially-relevant rates. The submicron-sized Ni power described earlier was loaded into a semi-continuous ALD reactor as described by commonly assigned U.S. Patent Application Publication No. 2011/0236575, and passed through the system at high rates to determine the feasibility of mass production. The core material was passed through the semi-continuous counter-current flow system for the appropriate number of times to achieve the previously defined critical coating thickness for the material. The oxidation resistance of this material was identical to that produced in lab-scale fluidized bed reactors, however the throughput in the semi-continuous ALD reactor is ˜200 times the throughput of batch systems, yet maintains a nearly equivalent footprint. These tests at both the small scale and large scale demonstrate the applicability of producing the composite materials in a large scale, and the ability to incorporate these compositions into conventional and high temperature MLCC devices, and applicability to a wide array of electronic components and devices that are fabricated using inks, pastes or tapes that include oxidation-resistant base metal electrode powders.

The foregoing discussion of the invention has been presented for purposes of illustration and description. The foregoing is not intended to limit the invention to the form or forms disclosed herein. Although the description of the invention has included description of one or more embodiments and certain variations and modifications, other variations and modifications are within the scope of the invention, e.g., as may be within the skill and knowledge of those in the art, after understanding the present disclosure. It is intended to obtain rights which include alternative embodiments to the extent permitted, including alternate, interchangeable and/or equivalent structures, functions, ranges or steps to those claimed, whether or not such alternate, interchangeable and/or equivalent structures, functions, ranges or steps are disclosed herein, and without intending to publicly dedicate any patentable subject matter. All references cited herein are incorporated by reference in their entirety. 

What is claimed is:
 1. A passive electronics component comprising an electrode layer of electric conducting nanoparticles that are coated with a thin film of oxidation-resistant material, wherein said thin film of oxidation-resistant material prevents oxidation of said nanoparticles, wherein a function of said electrode layer is substantially the same to a similar electrode layer of electric conducting nanoparticles in the absence of said thin film of oxidation-resistant material, and wherein a thermal oxidation onset temperature of said nanoparticles is at least 25° C. higher than the same nanoparticles in the absence of said thin film of oxidation-resistant material.
 2. The passive electronics component of claim 1, wherein said thin film of oxidation-resistant material provides no significant additional resistivity to said nanoparticles.
 3. The passive electronics component of claim 1, wherein said thin film of oxidation-resistant material does not significantly affect the sintering of said nanoparticles.
 4. The passive electronics component of claim 1, wherein said thin film of oxidation-resistant material comprises a thin film of wide bandgap material.
 5. The passive electronics component of claim 4, wherein said thin film of wide bandgap material comprises a thin film of a material selected from the group consisting of aluminum oxide, hafnium oxide, zirconium oxide, silicon oxide, boron oxide, aluminum nitride, gallium nitride, boron nitride, silicon carbide, boron carbide, or a combination thereof.
 6. The passive electronics component of claim 4, wherein the thickness of said thin film of wide bandgap material is 5.5 nm or less.
 7. The passive electronics component of claim 1, wherein said thin film of oxidation-resistant material comprises a thin film of semiconducting or conducting material.
 8. The passive electronics component of claim 2, wherein the resistivity of said thin film of oxidation-resistant material is 10,000 mW-cm or less.
 9. The passive electronics component of claim 1, wherein the average particle size of said nanoparticles is 500 nm or less.
 10. The passive electronics component of claim 1, wherein said thin film of oxidation-resistant material is produced at least in part by an atomic layer deposition process.
 11. The passive electronics component of claim 1, wherein said passive electronics component comprises a plurality of said electrode layers.
 12. The passive electronics component of claim 1, wherein said passive electronics component is selected from the group consisting of a resistor, a capacitor, an inductor, a transformer, an actuator, a piezoelectric, a varistor, a transducer, a memristor, a sensor, a thyristor, a thermistor, and a transistor.
 13. The passive electronics component of claim 1, further comprising a dielectric or piezoelectric layer of corresponding nanoparticles that are coated with a thin film of a reliability-improving material.
 14. An electronic device comprising the passive electronics component of claim
 1. 15. A passive electronics component comprising an electrode layer of electric conducting nanoparticles that are coated with a thin film of oxidation-resistant material, wherein said thin film of oxidation-resistant material prevents oxidation of said nanoparticles, wherein a function of said electrode layer is substantially the same to a similar electrode layer of electric conducting nanoparticles in the absence of said thin film of oxidation-resistant material, and wherein said thin film of oxidation-resistant material comprises a dopant material such that said dopant material increases the conductivity of said thin film of oxidation-resistant material by at least 100%.
 16. The passive electronics component of claim 15, further comprising a dielectric or piezoelectric layer of corresponding nanoparticles that are coated with a thin film of a reliability-improving material.
 17. An electronic device comprising the passive electronics component of claim
 15. 18. The passive electronics component of claim 15, wherein said thin film of oxidation-resistant material does not significantly affect the sintering of said nanoparticles.
 19. The passive electronics component of claim 15, wherein said thin film of oxidation-resistant material comprises a thin film of wide bandgap material.
 20. The passive electronics component of claim 19, wherein said thin film of wide bandgap material comprises a thin film of a material selected from the group consisting of aluminum oxide, hafnium oxide, zirconium oxide, silicon oxide, boron oxide, aluminum nitride, gallium nitride, boron nitride, silicon carbide, boron carbide, or a combination thereof.
 21. The passive electronics component of claim 19, wherein the thickness of said thin film of wide bandgap material is 5.5 nm or less.
 22. The passive electronics component of claim 15, wherein said thin film of oxidation-resistant material comprises a thin film of semiconducting or conducting material.
 23. The passive electronics component of claim 15, wherein the average particle size of said nanoparticles is 500 nm or less.
 24. The passive electronics component of claim 15, wherein said thin film of oxidation-resistant material is produced at least in part by an atomic layer deposition process.
 25. The passive electronics component of claim 15, wherein said passive electronics component comprises a plurality of said electrode layers.
 26. The passive electronics component of claim 15, wherein said passive electronics component is selected from the group consisting of a resistor, a capacitor, an inductor, a transformer, an actuator, a piezoelectric, a varistor, a transducer, a memristor, a sensor, a thyristor, a thermistor, and a transistor.
 27. A passive electronics component comprising an electrode layer of electric conducting particles that are coated with a thin film of oxidation-resistant material, wherein said thin film of oxidation-resistant material prevents oxidation of said particles, and wherein a function of said electrode layer is substantially the same to a similar electrode layer of electric conducting particles in the absence of said thin film of oxidation-resistant material, and wherein a thermal oxidation onset temperature of said particles is at least 25° C. higher than the same particles in the absence of said thin film of oxidation-resistant material. 